Repeated growth and bubbling transfer of graphene with millimetre-size single-crystal grains using platinum

被引：752

作者：

Gao, Libo ^{[1
]}

Ren, Wencai ^{[1
]}

Xu, Huilong ^{[2
]}

Jin, Li ^{[3
]}

Wang, Zhenxing ^{[2
]}

Ma, Teng ^{[1
]}

Ma, Lai-Peng ^{[1
]}

Zhang, Zhiyong ^{[2
]}

Fu, Qiang ^{[3
]}

Peng, Lian-Mao ^{[2
]}

Bao, Xinhe ^{[3
]}

Cheng, Hui-Ming ^{[1
]}

机构：

[1] Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China

[2] Peking Univ, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China

[3] Chinese Acad Sci, Dalian Inst Chem Phys, State Key Lab Catalysis, Dalian 116023, Peoples R China

来源：

NATURE COMMUNICATIONS | 2012年 / 3卷

基金：

美国国家科学基金会;

关键词：

LARGE-AREA; EPITAXIAL GRAPHENE; FILMS; CARBON; LAYERS; CU;

D O I：

10.1038/ncomms1702

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Large single-crystal graphene is highly desired and important for the applications of graphene in electronics, as grain boundaries between graphene grains markedly degrade its quality and properties. Here we report the growth of millimetre-sized hexagonal single-crystal graphene and graphene films joined from such grains on Pt by ambient-pressure chemical vapour deposition. We report a bubbling method to transfer these single graphene grains and graphene films to arbitrary substrate, which is nondestructive not only to graphene, but also to the Pt substrates. The Pt substrates can be repeatedly used for graphene growth. The graphene shows high crystal quality with the reported lowest wrinkle height of 0.8 nm and a carrier mobility of greater than 7,100 cm(2) V-1 s(-1) under ambient conditions. The repeatable growth of graphene with large single-crystal grains on Pt and its nondestructive transfer may enable various applications.

引用

页数：7

共 38 条

[1] Giant Nonlocality Near the Dirac Point in Graphene [J].

Abanin, D. A. ;

Morozov, S. V. ;

Ponomarenko, L. A. ;

Gorbachev, R. V. ;

Mayorov, A. S. ;

Katsnelson, M. I. ;

Watanabe, K. ;

Taniguchi, T. ;

Novoselov, K. S. ;

Levitov, L. S. ;

Geim, A. K. .

SCIENCE, 2011, 332 (6027) :328-330

[2] Domain (Grain) Boundaries and Evidence of "Twinlike" Structures in Chemically Vapor Deposited Grown Graphene [J].

An, Jinho ;

Voelkl, Edgar ;

Suk, Ji Won ;

Li, Xuesong ;

Magnuson, Carl W. ;

Fu, Lianfeng ;

Tiemeijer, Peter ;

Bischoff, Maarten ;

Freitag, Bert ;

Popova, Elmira ;

Ruoff, Rodney S. .

ACS NANO, 2011, 5 (04) :2433-2439

[3] Methane dissociation and syngas formation on Ru, Os, Rh, Ir, Pd, Pt, Cu, Ag, and Au: A theoretical study [J].

Au, CT ;

Ng, CF ;

Liao, MS .

JOURNAL OF CATALYSIS, 1999, 185 (01) :12-22

[4]

Bae S, 2010, NAT NANOTECHNOL, V5, P574, DOI [10.1038/nnano.2010.132, 10.1038/NNANO.2010.132]

[5] Role of Kinetic Factors in Chemical Vapor Deposition Synthesis of Uniform Large Area Graphene Using Copper Catalyst [J].

Bhaviripudi, Sreekar ;

Jia, Xiaoting ;

Dresselhaus, Mildred S. ;

Kong, Jing .

NANO LETTERS, 2010, 10 (10) :4128-4133

[6] Synthesis of Large-Area Graphene Layers on Poly-Nickel Substrate by Chemical Vapor Deposition: Wrinkle Formation [J].

Chae, Seung Jin ;

Guenes, Fethullah ;

Kim, Ki Kang ;

Kim, Eun Sung ;

Han, Gang Hee ;

Kim, Soo Min ;

Shin, Hyeon-Jin ;

Yoon, Seon-Mi ;

Choi, Jae-Young ;

Park, Min Ho ;

Yang, Cheol Woong ;

Pribat, Didier ;

Lee, Young Hee .

ADVANCED MATERIALS, 2009, 21 (22) :2328-+

[7] Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor [J].

Das, A. ;

Pisana, S. ;

Chakraborty, B. ;

Piscanec, S. ;

Saha, S. K. ;

Waghmare, U. V. ;

Novoselov, K. S. ;

Krishnamurthy, H. R. ;

Geim, A. K. ;

Ferrari, A. C. ;

Sood, A. K. .

NATURE NANOTECHNOLOGY, 2008, 3 (04) :210-215

[8]

Emtsev KV, 2009, NAT MATER, V8, P203, DOI [10.1038/nmat2382, 10.1038/NMAT2382]

[9] Raman spectrum of graphene and graphene layers [J].

Ferrari, A. C. ;

Meyer, J. C. ;

Scardaci, V. ;

Casiraghi, C. ;

Lazzeri, M. ;

Mauri, F. ;

Piscanec, S. ;

Jiang, D. ;

Novoselov, K. S. ;

Roth, S. ;

Geim, A. K. .

PHYSICAL REVIEW LETTERS, 2006, 97 (18)

[10] Epitaxial Graphene on Cu(111) [J].

Gao, Li ;

Guest, Jeffrey R. ;

Guisinger, Nathan P. .

NANO LETTERS, 2010, 10 (09) :3512-3516

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