A review of focused ion beam milling techniques for TEM specimen preparation

被引：971

作者：

Giannuzzi, LA ^{[1
]}

Stevie, FA

机构：

[1] Univ Cent Florida, Adv Mat Proc & Anal Ctr, Orlando, FL 32816 USA

[2] Cirent Semicond, Orlando, FL 32819 USA

来源：

MICRON | 1999年 / 30卷 / 03期

基金：

美国国家科学基金会;

关键词：

focused ion beam; transmission electron microscopy (TEM); scanning electron microscopy (SEM); secondary ion mass spectrometry (SIMS);

D O I：

10.1016/S0968-4328(99)00005-0

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

The use of focused ion beam (FIB) milling for the preparation of transmission electron microscopy (TEM) specimens is described. The operation of the FIB instrument is discussed and the conventional and lift-out techniques for TEM specimen preparation and the advantages and disadvantages of each technique are detailed. The FIB instrument may be used for rapid site-specific preparation of both cross-section and plan view TEM specimens. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：197 / 204

页数：8

共 31 条

[1]

ALBAREDEPH, 1998, ELECTRON MIROSCOPY 1, P431

[2] Combined tripod polishing and fib method for preparing semiconductor plan view specimens [J].

Anderson, R ;

Klepeis, SJ .

SPECIMEN PREPARATION FOR TRANSMISSION ELECTRON MICROSCOPY OF MATERIALS IV, 1997, 480 :187-192

[3] High resolution structure imaging of octahedral void defects in as-grown Czochralski silicon [J].

Bender, H ;

Vanhellemont, J ;

Schmolke, R .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (9AB) :L1217-L1220

[4] Focused ion beam milling and micromanipulation lift-out for site specific cross-section TEM specimen preparation [J].

Giannuzzi, LA ;

Drown, JL ;

Brown, SR ;

Irwin, RB ;

Stevie, FA .

SPECIMEN PREPARATION FOR TRANSMISSION ELECTRON MICROSCOPY OF MATERIALS IV, 1997, 480 :19-27

[5]

GIANNUZZI LA, 1997, MICROSCOPY MICROA S2, V3, P347

[6]

GIANUZZI LA, 1998, 31 ANN CONV INT MET

[7]

HERLINGER LR, 1996, 22 INT S TEST FAIL A, P199

[8] OBSERVATION OF STRONG CONTRAST FROM DOPING VARIATIONS IN TRANSMISSION ELECTRON-MICROSCOPY OF INP-BASED SEMICONDUCTOR-LASER DIODES [J].

HULL, R ;

STEVIE, FA ;

BAHNCK, D .

APPLIED PHYSICS LETTERS, 1995, 66 (03) :341-343

[9]

Hull R., 1998, Microscopy and Microanalysis, V4, P648, DOI 10.1017/S1431927600023369

[10]

KAMINO T, 1998, MICROSCOPY MICROA S2, V4, P654

← 1 2 3 4 →