OBSERVATION OF STRONG CONTRAST FROM DOPING VARIATIONS IN TRANSMISSION ELECTRON-MICROSCOPY OF INP-BASED SEMICONDUCTOR-LASER DIODES

被引：12

作者：

HULL, R ^{[1
]}

STEVIE, FA ^{[1
]}

BAHNCK, D ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 03期

关键词：

D O I：

10.1063/1.114206

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report strong transmission electron microscope (TEM) contrast between p-, i-, and n-doped InP layers in semiconductor laser diodes. For doping concentrations ∼1018 cm-3, contrast levels on the order 30% are observed between p- and n-type layers. A critical feature of these experiments is that the samples imaged in the TEM are relatively perfect, plane-parallel sided membranes fabricated with a focused ion beam. This technique offers the ability to detect and map doping variations with nm-scale resolution, simultaneously with the other compositional and defect information inherent to TEM. © 1995 American Institute of Physics.

引用

页码：341 / 343

页数：3

共 5 条

[1] EFFECT OF POINT DEFECTS ON ABSORPTION OF HIGH ENERGY ELECTRONS PASSING THROUGH CRYSTALS [J].