MICROSCOPIC STUDIES OF SEMICONDUCTOR-LASERS UTILIZING A COMBINATION OF TRANSMISSION ELECTRON-MICROSCOPY, ELECTROLUMINESCENCE IMAGING, AND FOCUSED ION-BEAM SPUTTERING

被引：20

作者：

HULL, R

BAHNCK, D

STEVIE, FA

KOSZI, LA

CHU, SNG

机构：

[1] ATandT Bell Laboratories, Murray Hill, NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 26期

关键词：

D O I：

10.1063/1.109032

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The microstructure of semiconductor laser diodes is studied using a combination of focused ion beam sputtering, electroluminescence imaging, and cross-sectional transmission electron microscopy. Careful control of focused ion beam sputtering allows fabrication of high quality thin membranes for transmission electron microscope imaging, which can be located to submicron accuracy at a given position on the laser active stripe. By correlation with electroluminescence imaging, the membrane may then be positioned at an optically degraded region of the active stripe. In addition, imaging of the complete cross-sectional laser structure, from substrate to surface contact layers is possible. The applications of these techniques to studies of laser degradation mechanisms are demonstrated and discussed.

引用

页码：3408 / 3410

页数：3

共 8 条

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[8] [No title captured]

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