A FAST PREPARATION TECHNIQUE FOR HIGH-QUALITY PLAN VIEW AND CROSS-SECTION TEM SPECIMENS OF SEMICONDUCTING MATERIALS

被引：48

作者：

ROMANO, A ^{[1
]}

VANHELLEMONT, J ^{[1
]}

BENDER, H ^{[1
]}

MORANTE, JR ^{[1
]}

机构：

[1] UNIV BARCELONA,FAC FIS,CATEDRA ELECTR,E-08028 BARCELONA,SPAIN

来源：

关键词：

D O I：

10.1016/0304-3991(89)90212-X

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

引用

页码：183 / 192

页数：10

共 15 条

[1] CROSS-SECTIONAL SPECIMENS FOR TRANSMISSION ELECTRON-MICROSCOPY
ABRAHAMS, MS
BUIOCCHI, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (08) : 3315 - 3316
[2] BENDER H, 1985, I PHYS C SER, V76, P17
[3] BOONE T, 1988, MATER RES SOC S P, V115, P81
[4] THE PREPARATION OF CROSS-SECTION SPECIMENS FOR TRANSMISSION ELECTRON-MICROSCOPY
BRAVMAN, JC
SINCLAIR, R
[J]. JOURNAL OF ELECTRON MICROSCOPY TECHNIQUE, 1984, 1 (01): : 53 - 61
[5] SUPPRESSION OF SURFACE-TOPOGRAPHY DEVELOPMENT IN ION-MILLING OF SEMICONDUCTORS
BULLELIEUWMA, CWT
ZALM, PC
[J]. SURFACE AND INTERFACE ANALYSIS, 1987, 10 (04) : 210 - 215
[6] DEVEIRMAN A, 1988, MATER RES SOC S P, V115, P241
[7] HETHERINGTON CJD, 1988, MATER RES SOC S P, V115, P143
[8] Klepeis S.J., 1988, MAT RES SOC S P, V115, P179
[9] NEW PREPARATION METHOD FOR LARGE AREA ELECTRON-TRANSPARENT SILICON SAMPLES
KOLBESEN, BO
MAYER, KR
SCHUH, GE
[J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1975, 8 (03): : 197 - 199
[10] A VARIATION OF TRANSMISSION ELECTRON-MICROSCOPE SAMPLE PREPARATION FOR VLSI ANALYSIS
MADDEN, MC
CRAFARD, P
[J]. JOURNAL OF ELECTRON MICROSCOPY TECHNIQUE, 1989, 11 (02): : 161 - 166