DEFECT MECHANISMS IN DEGRADATION OF 1.3-MU-M WAVELENGTH CHANNELED-SUBSTRATE BURIED HETEROSTRUCTURE LASERS

被引：45

作者：

CHU, SNG

NAKAHARA, S

TWIGG, ME

KOSZI, LA

FLYNN, EJ

CHIN, AK

SEGNER, BP

JOHNSTON, WD

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 03期

关键词：

D O I：

10.1063/1.340100

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：611 / 623

页数：13

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共 61 条

[1] DEGRADATION OF 1.3-MUM INP INGAASP LIGHT-EMITTING-DIODES WITH MISFIT DISLOCATIONS
CHIN, AK
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[J]. APPLIED PHYSICS LETTERS, 1983, 42 (12) : 1031 - 1033
[2] DIRECT EVIDENCE FOR THE ROLE OF GOLD MIGRATION IN THE FORMATION OF DARK-SPOT DEFECTS IN 1.3-MU-M INP/INGAASP LIGHT-EMITTING-DIODES
CHIN, AK
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GEVA, M
CAMLIBEL, I
SKEATH, P
CHIN, BH
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (01) : 37 - 39
[3] CATHODOLUMINESCENCE EVALUATION OF DARK SPOT DEFECTS IN INP/INGAASP LIGHT-EMITTING-DIODES
CHIN, AK
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MAHAJAN, S
ERMANIS, F
DIGIUSEPPE, MA
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (06) : 555 - 557
[4] CHU SC, UNPUB
[5] INFLUENCE OF (111) REGROWTH SIDEWALL INTERFACES ON THE PERFORMANCE OF 1.54 MU-M INGAASP/INP ETCHED-MESA-BURIED-HETEROSTRUCTURE LASERS
CHU, SNG
LOGAN, RA
TEMKIN, H
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (07) : 2434 - 2437
[6] CHU SNG, 1984, J ELECTROCHEM SOC, V131, P2663, DOI 10.1149/1.2115378
[7] NEW DISLOCATION ETCHANT FOR INP
CHU, SNG
JODLAUK, CM
BALLMAN, AA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (02) : 352 - 354
[8] MORPHOLOGICAL-STUDY OF THERMAL-DECOMPOSITION OF INP SURFACES
CHU, SNG
JODLAUK, CM
JOHNSTON, WD
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (12) : 2398 - 2405
[9] SURFACE-LAYER SPINODAL DECOMPOSITION IN IN1-XGAXASYP1-Y AND IN1-XGAXAS GROWN BY HYDRIDE TRANSPORT VAPOR-PHASE EPITAXY
CHU, SNG
NAKAHARA, S
STREGE, KE
JOHNSTON, WD
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (10) : 4610 - 4615
[10] LOW THRESHOLD CHANNELLED-SUBSTRATE BURIED CRESCENT INGAASP LASERS EMITTING AT 1.54 MU-M
DEVLIN, WJ
WALLING, RH
FIDDYMENT, PJ
HOBBS, RE
MURRELL, D
SPILLETT, RE
STEVENTON, AG
[J]. ELECTRONICS LETTERS, 1981, 17 (18) : 651 - 653

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