DIRECT EVIDENCE FOR THE ROLE OF GOLD MIGRATION IN THE FORMATION OF DARK-SPOT DEFECTS IN 1.3-MU-M INP/INGAASP LIGHT-EMITTING-DIODES

被引:21
作者
CHIN, AK
ZIPFEL, CL
GEVA, M
CAMLIBEL, I
SKEATH, P
CHIN, BH
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10.1063/1.94995
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O59 [应用物理学];
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页码:37 / 39
页数:3
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共 19 条
[1]   TEM OBSERVATIONS OF LASER-INDUCED PT AND AU DEPOSITION ON INP [J].
BRASEN, D ;
KARLICEK, RF ;
DONNELLY, VM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (07) :1473-1475
[2]   METALLURGICAL BEHAVIOR OF GOLD-BASED OHMIC CONTACTS TO THE INP/INGAASP MATERIAL SYSTEM [J].
CAMLIBEL, I ;
CHIN, AK ;
ERMANIS, F ;
DIGIUSEPPE, MA ;
LOURENCO, JA ;
BONNER, WA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (11) :2585-2590
[3]   NEW RESTRICTED CONTACT LEDS USING A SCHOTTKY-BARRIER [J].
CHIN, AK ;
ZIPFEL, CL ;
DUTT, BV ;
DIGIUSEPPE, MA ;
BAUERS, KB ;
ROCCASECCA, DD .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (08) :1487-1491
[4]   THE MIGRATION OF GOLD FROM THE P-CONTACT AS A SOURCE OF DARK SPOT DEFECTS IN INP/INGAASP LEDS [J].
CHIN, AK ;
ZIPFEL, CL ;
ERMANIS, F ;
MARCHUT, L ;
CAMLIBEL, I ;
DIGIUSEPPE, MA ;
CHIN, BH .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (04) :304-310
[5]  
ETTENBERG M, 1983, J VAC SCI TECHNOL, V19, P799
[6]   INTERFACIAL REACTION AND SCHOTTKY-BARRIER BETWEEN PT AND GAAS [J].
FONTAINE, C ;
OKUMURA, T ;
TU, KN .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) :1404-1412
[7]  
FUJITA O, 1983, 1983 SPRING SEM ANN
[8]  
KERAMIDAS VG, 1981, I PHYS C SER, V56, P293
[9]   ORIGIN OF DARK SPOT DEFECTS IN InP/InGaAsP AGED LIGHT EMITTING DIODES. [J].
Mahajan, S. ;
Chin, A.K. ;
Zipfel, C.L. ;
Brasen, D. ;
Chin, B.H. ;
Tung, R.T. ;
Nakahara, S. .
Materials Letters, 1984, 2 (03) :184-188
[10]   MEASUREMENT OF THE DEPT OF DIFFUSED LAYERS IN SILICON BY THE GROOVING METHOD [J].
MCDONALD, B ;
GOETZBERGER, A .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (02) :141-144