Ag-doped double-sided PLD-YBCO thin films for passive microwave devices in future communication systems

被引:16
作者
Lorenz, M [1 ]
Hochmuth, H
Natusch, D
Lippold, G
Svetchnikov, VL
Kaiser, T
Hein, MA
Schwab, R
Heidinger, R
机构
[1] Univ Leipzig, Fak Phys & Geowissensch, D-04103 Leipzig, Germany
[2] Delft Univ Technol, Natl Ctr HREM, NL-2628 AL Delft, Netherlands
[3] Berg Univ Gesamthsch Wuppertal, Fachbereich Phys, D-42097 Wuppertal, Germany
[4] Forschungszentrum Karlsruhe, Inst Mat Forsch 1, D-76021 Karlsruhe, Germany
关键词
D O I
10.1109/77.784839
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Pulsed laser deposited (PLD) Ag-doped YBa2Ca3O7-x (YBCO) thin films on both sides of 3-inch diameter sapphire wafers are used routinely for development of microwave filters for future communication systems. The reproducibly deposited YBCO:Ag films of about 250 nm thickness show critical current densities of 4 MA/cm(2) at 77 K and laterally homogeneous maps of microwave surface resistance R of about 45 m Omega at 145 GHz and 77 K measured by an open resonator technique. The R at 8.4 GHz and 77 It determined in the center position of the YBCO:Bg films with a sapphire resonator technique remains constant at about 380 mu Omega up to a microwave surface magnetic field of 7-10 mT. Correlations of transport and microwave properties to the film microstructure are shown in terms of in-plane epitaxy, size of particulates on the films, and composition ratios Cu/O and Y/O, and growth defects like stacking faults as shown by Raman spectroscopy, SEM, and SNMS depth profiling, and TEM cross sections, respectively. The optimum Ag-content of the PLD-YBCO target was determined to be about 4 weight -%. The results demonstrate that Ag-doping supports the PLD process for YBCO in terms of reliability and cost effectiveness.
引用
收藏
页码:1936 / 1939
页数:4
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