Organic Complementary Logic Circuits and Volatile Memories Integrated on Plastic Foils

被引:16
作者
Guerin, Mathieu [1 ,2 ]
Bergeret, Emmanuel [1 ,2 ]
Benevent, Evangeline [1 ,2 ]
Daami, Anis [3 ]
Pannier, Philippe [1 ,2 ]
Coppard, Romain [3 ]
机构
[1] Aix Marseille Univ, IM2NP, F-13397 Marseille, France
[2] CNRS, UMR 7334, IM2NP, F-13397 Marseille, France
[3] CEA Grenoble, LCEI, LITEN, F-38054 Grenoble, France
关键词
Digital; flip-flop; organic; thin film; transistor; THIN-FILM TRANSISTORS;
D O I
10.1109/TED.2013.2255879
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents organic based logic and memory circuits. All those circuits are made with organic N- and P-type transistors. Organic complementary NAND and NOR gates were characterized and show performance equivalent to or better than the literature-reported ones. The presented memory circuits include an SRAM memory point and an edge-triggered flip-flop. The flip-flop is made of six organic two-input and three-input NAND gates, representing a total of 26 organic transistors for a surface of 170 mm(2). The maximum operating frequency of this flip-flop is 220 Hz under a supply of +/- 20 V. All the circuits were manufactured using a standard organic sheet-to-sheet process in ambient air. Electrical characteristics remain identical after repeated measurements. Finally, a model matching the presented circuits' behavior was carried out, permitting the design of more complex circuits.
引用
收藏
页码:2045 / 2051
页数:7
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