Optimum tone for various feature types: positive versus negative

被引:44
作者
Brunner, TA [1 ]
Fonseca, C [1 ]
机构
[1] IBM Corp, SRDC, Hopewell Jct, NY 12533 USA
来源
ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVIII, PTS 1 AND 2 | 2001年 / 4345卷
关键词
optical lithography; photoresist; lithography simulation; process control; negative tone resist; 193nm resist;
D O I
10.1117/12.436866
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The continuing drive to reduce feature size is forcing resist processes to be tailored to specific levels, e.g. contact holes or isolated lines. Resist contrast, absorption, diffusion length and development characteristics are among the customized variables. For the most part, resist tone has not been among these variables, and the bulk of advanced lithography is done with positive tone resist processes. This paper will explore the optimum process tone for various feature types, and will include simple theoretical guidelines to help with this decision. Narrow resist lines are found to print best with a positive tone process while narrow trench geometries are found to print best with a negative tone process. Simple development bias models appear to accurately capture this behavior and are in agreement with full simulation.
引用
收藏
页码:30 / 36
页数:7
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