Photoluminescence properties of MgxZn1-xO alloy thin films fabricated by the sol-gel deposition method

被引：87

作者：

Zhao, DX ^{[1
]}

Liu, YC ^{[1
]}

Shen, DZ ^{[1
]}

Lu, YM ^{[1
]}

Zhang, JY ^{[1
]}

Fan, XW ^{[1
]}

机构：

[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Lab Excited State Proc, Changchun 130021, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 90卷 / 11期

关键词：

D O I：

10.1063/1.1413948

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The photoluminescence properties of MgxZn1-xO alloy thin films fabricated by the sol-gel deposition method were studied. The Mg2+ content in the films was up to 0.36 and they had the ZnO wurtzite structure. The band gap of the films can be controlled between 3.40 and 3.93 eV by adjusting the Mg2+ proportions. Transmittance spectroscopy was used to characterize the excitonic structure of the alloys, which the excitonic character is clearly visible at room temperature. The intense ultraviolet photoluminescence was observed at room temperature. This emission is indicative of the excitonic nature of the material. (C) 2001 American Institute of Physics.

引用

页码：5561 / 5563

页数：3

共 16 条

[11] MgxZn1-xO as a II-VI widegap semiconductor alloy [J].