Novel Rewritable, Non-volatile Memory Devices Based on Thermally and Dimensionally Stable Polyimide Thin Films

被引:165
作者
Hahm, Suk Gyu [1 ,2 ]
Choi, Seungchel [1 ,2 ]
Hong, Sang-Hyun [3 ,4 ]
Lee, Taek Joon [1 ,2 ]
Park, Samdae [1 ,2 ]
Kim, Dong Min [1 ,2 ]
Kwon, Won-Sang [1 ,2 ]
Kim, Kyungtae [1 ,2 ]
Kim, Ohyun [3 ,4 ]
Ree, Moonhor [1 ,2 ]
机构
[1] Pohang Univ Sci & Technol POSTECH, BK Sch Mol Sci, Ctr Integrated Mol Syst, Dept Chem,Natl Res Lab Polymer Synth & Phys, Pohang 790784, South Korea
[2] Pohang Univ Sci & Technol POSTECH, Polymer Res Inst, Pohang 790784, South Korea
[3] Pohang Univ Sci & Technol POSTECH, Dept Elect & Elect Engn, Pohang 790784, South Korea
[4] Pohang Univ Sci & Technol POSTECH, Program BK21, Pohang 790784, South Korea
关键词
D O I
10.1002/adfm.200800758
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Novel digital memory devices were fabricated with a thermally and dimensionally stable polyimide containing carbazole moieties in its side groups by using a simple and conventional solution coating process. The devices exhibit excellent unipolar ON and OFF switching behavior. With very low power consumption, the devices can be repeatedly written, read, and erased in air. The ON/OFF current ratio of the devices is high up to 10(11). The high ON/OFF switching ratio and stability of the devices, as well as their repeatable writing, reading, and erasing capability with low power consumption, open up the possibility of the mass production of high performance non-volatile memory devices at low cost.
引用
收藏
页码:3276 / 3282
页数:7
相关论文
共 34 条
[1]   EVIDENCE OF SWITCHING AND RECTIFICATION BY A SINGLE MOLECULE EFFECTED WITH A SCANNING TUNNELING MICROSCOPE [J].
AVIRAM, A ;
JOACHIM, C ;
POMERANTZ, M .
CHEMICAL PHYSICS LETTERS, 1988, 146 (06) :490-495
[2]   Novel digital nonvolatile memory devices based on semiconducting polymer thin films [J].
Baek, Sungsik ;
Lee, Dongjin ;
Kim, Jiyoun ;
Hong, Sang-Hyun ;
Kim, Ohyun ;
Ree, Moonhor .
ADVANCED FUNCTIONAL MATERIALS, 2007, 17 (15) :2637-2644
[3]   Multilevel conductivity and conductance switching in supramolecular structures of an organic molecule [J].
Bandyopadhyay, A ;
Pal, AJ .
APPLIED PHYSICS LETTERS, 2004, 84 (06) :999-1001
[4]   Space-charge limited conduction with traps in poly(phenylene vinylene) light emitting diodes [J].
Campbell, AJ ;
Bradley, DDC ;
Lidzey, DG .
JOURNAL OF APPLIED PHYSICS, 1997, 82 (12) :6326-6342
[5]   Low-temperature crystallized pyrochlore bismuth zinc niobate thin films by excimer laser annealing [J].
Cheng, JG ;
Wang, JL ;
Dechakupt, T ;
Trolier-McKinstry, S .
APPLIED PHYSICS LETTERS, 2005, 87 (23) :1-3
[6]   High-performance programmable memory devices based on hyperbranched copper phthalocyanine polymer thin films [J].
Choi, Seungchel ;
Hong, Sang-Hyun ;
Cho, Shin Hyo ;
Park, Samdae ;
Park, Su-Moon ;
Kim, Ohyun ;
Ree, Moonhor .
ADVANCED MATERIALS, 2008, 20 (09) :1766-+
[7]   Organic donor-acceptor system exhibiting electrical bistability for use in memory devices [J].
Chu, CW ;
Ouyang, J ;
Tseng, HH ;
Yang, Y .
ADVANCED MATERIALS, 2005, 17 (11) :1440-+
[8]   Conductance switching in single molecules through conformational changes [J].
Donhauser, ZJ ;
Mantooth, BA ;
Kelly, KF ;
Bumm, LA ;
Monnell, JD ;
Stapleton, JJ ;
Price, DW ;
Rawlett, AM ;
Allara, DL ;
Tour, JM ;
Weiss, PS .
SCIENCE, 2001, 292 (5525) :2303-2307
[9]  
Frenkel J, 1938, PHYS REV, V54, P647, DOI 10.1103/PhysRev.54.647
[10]   Reversible, nanometer-scale conductance transitions in an organic complex [J].
Gao, HJ ;
Sohlberg, K ;
Xue, ZQ ;
Chen, HY ;
Hou, SM ;
Ma, LP ;
Fang, XW ;
Pang, SJ ;
Pennycook, SJ .
PHYSICAL REVIEW LETTERS, 2000, 84 (08) :1780-1783