The s,q-d exchange interaction in GaAs heavily doped with Mn

被引：85

作者：

Szczytko, J

Mac, W

Stachow, A

Twardowski, A

Becla, P

Tworzydlo, J

机构：

[1] UNIV WARSAW, INST EXPT PHYS, PL-00681 WARSAW, POLAND

[2] MIT, CAMBRIDGE, MA 02139 USA

[3] UNIV WARSAW, INST THEORET PHYS, PL-00681 WARSAW, POLAND

来源：

SOLID STATE COMMUNICATIONS | 1996年 / 99卷 / 12期

关键词：

semiconductors; impurities in semiconductors; exchange and superexchange; optical properties; light absorption and reflection;

D O I：

10.1016/0038-1098(96)00315-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The exciton splitting induced by the s,p-d exchange interaction in Ga1-xMnxAs (x < 0.001) was studied by polarized magnetoreflectance. Data were taken at 2K in magnetic fields up to 5T. Combining these results with magnetization data, a value (N-0 alpha - N-0 beta) = -(2.3 +/- 0.6) eV was obtained for the difference between the s-d and p-d exchange constants. Assuming that N-0 alpha approximate to +0.2 eV, the p-d exchange is ferromagnetic, with a magnitude N-0 beta approximate to +2.5 eV. Copyright (C) 1996 Published by Elsevier Science Ltd

引用

页码：927 / 931

页数：5

共 43 条

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[2]

ADRIANOW DG, 1983, SOV PHYS SEMICOND, V17, P506

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