VARIATION OF BAND-GAP WITH MN CONCENTRATION IN GA1-XMNXSB - A NEW III-V DILUTED MAGNETIC SEMICONDUCTOR

被引：7

作者：

BASU, S

ADHIKARI, T

机构：

[1] Semiconductor Preparation and Processing Laboratory, Materials Science Centre, I.I.T., Kharagpur

来源：

SOLID STATE COMMUNICATIONS | 1995年 / 95卷 / 01期

关键词：

SEMICONDUCTORS; CRYSTAL GROWTH; ELECTRONIC STATES; OPTICAL PROPERTIES; LIGHT ABSORPTION;

D O I：

10.1016/0038-1098(95)00160-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Optical absorption measurements at room temperature were carried out and the dependence of band gap (E(g)) on Mn concentration (x) was studied with Ga1-xMnxSb, a new III-V Diluted Magnetic Semiconductor (DMS). The band gap decreased with increasing x and the variation followed a non-linear to linear trend. The non-linearity at lower Mn concentration was explained on the basis of magnetic ion-carrier exchange interactions.

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页码：53 / 55

页数：3

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