ELECTRICAL-PROPERTIES OF GALLIUM MANGANESE ANTIMONIDE - A NEW DILUTED MAGNETIC SEMICONDUCTOR

被引：21

作者：

ADHIKARI, T

BASU, S

机构：

[1] Semiconductor Preparation and Processing Laboratory, Materials Science Centre, I.I.T., Kharagpur

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 08期

关键词：

DILUTED MAGNETIC SEMICONDUCTOR; GALLIUM MANGANESE ANTIMONIDE; SEMICONDUCTOR ALLOY; BRIDGMAN GROWTH; DEGENERACY;

D O I：

10.1143/JJAP.33.4581

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ga1-xMnxSb, a ternary diluted magnetic semiconductor (DMS) alloy was newly synthesised with different Mn concentrations (x=0.0048, 0.01, 0.05 and 0.14) using Bridgman growth technique. The stoichiometry and the composition were verified by the electron probe microanalysis and X-ray diffraction analysis. At room temperature electrical parameters like resistivity, Hall co-efficient, carrier concentration and mobility were determined. The variations of resistivity and Hall co-efficient with temperature were studied and it was found that the alloy was degenerate in nature.

引用

页码：4581 / 4582

页数：2

共 5 条

[1] BULK GROWTH, COMPOSITION AND MORPHOLOGY OF GALLIUM MANGANESE ANTIMONIDE - A NEW TERNARY ALLOY SYSTEM [J].