Liquid-phase epitaxial growth of Zn-doped LiNbO3 thin films and optical damage resistance for second-harmonic generation

被引：20

作者：

Kawaguchi, T

Mizuuchi, K

Yoshino, T

Imaeda, M

Yamamoto, K

Fukuda, T

机构：

[1] NGK Insulators Ltd, Mizuho Ku, Nagoya, Aichi 4678530, Japan

[2] Matsushita Elect Ind Co Ltd, Osaka 5708501, Japan

[3] Tohoku Univ, IMR, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 203卷 / 1-2期

关键词：

LiNbO3; liquid-phase epitaxy; second-harmonic generation; optical damage;

D O I：

10.1016/S0022-0248(99)00084-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

ZnO-doped LiNbO3 (LN) liquid-phase epitaxial thin films grown on LN substrates were investigated as modified LN substrates for optical waveguide devices. The potential for optical use as substrates compatible with conventional ones was examined in quasi-phase-matched second-harmonic generation (SHG) devices from the viewpoint of the domain inversion process and optical damage properties. The formation of a periodically inverted-domain structure and the increased optical damage resistance in SHG were demonstrated. (C) 1999 Elsevier Science B.V. All rights reserved.

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页码：173 / 178

页数：6

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