Purification of metallurgical grade silicon by a solar process

被引：129

作者：

Flamant, G.

Kurtcuoglu, V.

Murray, J.

Steinfeld, A.

机构：

[1] CNRS, PROMES, Proc Mat & Solar Energy Lab, F-66120 Font Romeu, France

[2] ETH, Swiss Fed Inst Technol, Dept Mech & Proc Engn, CH-8092 Zurich, Switzerland

[3] Paul Scherrer Inst, Solar Technol Lab, CH-5232 Villigen, Switzerland

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2006年 / 90卷 / 14期

关键词：

solar chemistry; PV silicon; purification of silicone; silicon metallurgy; solar thermal process;

D O I：

10.1016/j.solmat.2006.02.009

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 [动力工程及工程热物理]; 0820 [石油与天然气工程];

摘要：

The purification of upgraded metallurgical silicon by extraction of boron and phosphorus was experimentally demonstrated using concentrated solar radiation in the temperature range 1550-1700 degrees C. The process operated with a flow of Ar at reduced pressure (0.05 atm) for elimination of P, and with a flow of H2O for elimination of B. Impurity content decreased by a factor of 3 after a 50-min solar treatment, yielding Si samples with final average content of 2.1 ppm(w) B and 3.2 ppm(w) P. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：2099 / 2106

页数：8

共 15 条

[1]

Refining of metallurgical-grade silicon by inductive plasma [J].