Solar cells from upgraded metallurgical grade (UMG) and plasma-purified UMG multi-crystalline silicon substrates

被引：38

作者：

De Wolf, S

Szlufcik, J

Delannoy, Y

Périchaud, I

Hässler, C

Einhaus, R

机构：

[1] IMEC VZW, B-3001 Heverlee, Belgium

[2] ENSHMG, F-38402 St Martin Dheres, France

[3] Univ Marseille, UMR TECSEN, F-13397 Marseille, France

[4] Bayer AG, D-47812 Krefeld, Germany

[5] Photowatt Int SA, F-38300 Bourgoin Jallieu, France

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2002年 / 72卷 / 1-4期

关键词：

crystalline silicon; impurities; defects; plasma purification; low resistivity; degradation;

D O I：

10.1016/S0927-0248(01)00149-0

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 [动力工程及工程热物理]; 0820 [石油与天然气工程];

摘要：

High impurity concentrations do not allow the direct use of upgraded metallurgical grade (UMG) Si for PV production. A newly developed prototype inductive plasma-purification system and process allowed the significant reduction of the elements B, C, O, P, Al, Ca, Fe and Ti, depending on the duration of the treatment. Based on this type of purification, it is shown that subsequent appropriate low-cost cell-processing yields homogeneously distributed energy conversion efficiencies throughout the cast ingots. Stabilised cell efficiencies of up to 14.7% were already experimentally shown to be attainable on highly B-doped (p < 0.1 Omega cm) 102 cm(2) multi-crystalline Si substrates of high purity. On plasma-purified UMG p-type 0.1-0.2 Omega cm ingots, efficiencies of up to 12.38% are reached, to be compared with about 10.12% on the same material without prior plasma treatment. Some light-induced degradation is present on processed samples, which is most likely linked to the presence of metastable boron-oxygen complexes in the material, and results in stabilised efficiencies of, respectively, 12.19% and 10.00%. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：49 / 58

页数：10

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