Scalable synthesis of graphene on single crystal Ir(111) films

被引：27

作者：

Zeller, Patrick ^{[1
]}

Daenhardt, Sebastian ^{[1
]}

Gsell, Stefan ^{[2
]}

Schreck, Matthias ^{[2
]}

Wintterlin, Joost ^{[1
,3
]}

机构：

[1] Univ Munich, Dept Chem, D-81377 Munich, Germany

[2] Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany

[3] Ctr NanoSci CeNS, D-80799 Munich, Germany

来源：

SURFACE SCIENCE | 2012年 / 606卷 / 19-20期

关键词：

Graphene; YSZ; Si(111); Ir(111); Metal films; Heteroepitaxy; EPITAXIAL GRAPHENE; LARGE-AREA;

D O I：

10.1016/j.susc.2012.05.014

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have investigated single crystal Ir(111) films grown heteroepitaxially on Si(111) wafers with yttria-stabilized zirconia (YSZ) buffer layers as possible substrates for an up-scalable synthesis of graphene. Graphene was grown by chemical vapor deposition (CVD) of ethylene. As surface analytical techniques we have used scanning tunneling microscopy (STM), low-energy electron diffraction, scanning electron microscopy, and atomic force microscopy. The mosaic spread of the metal films was below 0.2 degrees similar to or even below that of standard Ir bulk single crystals, and the films were basically twin-free. The film surfaces could be improved by annealing so that they attained the perfection of bulk single crystals. Depending on the CVD conditions a lattice-aligned graphene layer or a film consisting of different rotational domains were obtained. STM data of the non-rotated phase and of the phases rotated by 14 degrees and 19 degrees were acquired. The quality of the graphene was comparable to graphene grown on bulk Ir(111) single crystals. (c) 2012 Elsevier B.V. All rights reserved.

引用

页码：1475 / 1480

页数：6

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