Epitaxial Chemical Vapor Deposition Growth of Single-Layer Graphene over Cobalt Film Crystallized on Sapphire

被引:254
作者
Ago, Hiroki [1 ,2 ]
Ito, Yoshito [2 ]
Mizuta, Noriaki [2 ]
Yoshida, Kazuma [2 ]
Hu, Baoshan [1 ]
Orofeo, Carlo M. [1 ]
Tsuji, Masaharu [1 ,2 ]
Ikeda, Ken-ichi [2 ]
Mizuno, Seigi [2 ]
机构
[1] Kyushu Univ, Inst Mat Chem & Engn, Fukuoka 8168580, Japan
[2] Kyushu Univ, Grad Sch Engn Sci, Fukuoka 8168580, Japan
关键词
graphene; epitaxy; crystal orientation; CVD; growth mechanism; LARGE-AREA;
D O I
10.1021/nn102519b
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Epitaxial chemical vapor deposition (CVD) growth of uniform single-layer graphene is demonstrated over Co film crystallized on c-plane sapphire. The single crystalline Co film is realized on the sapphire substrate by optimized high-temperature sputtering and successive H-2 annealing. This crystalline Co film enables the formation of uniform single-layer graphene, while a polycrystalline Co film deposited on a SiO2/Si substrate gives a number of graphene flakes with various thicknesses. Moreover, an epitaxial relationship between the as-grown graphene and Co lattice is observed when synthesis occurs at 1000 degrees C; the direction of the hexagonal lattice of the single-layer graphene completely matches with that of the underneath Co/sapphire substrate. The orientation of graphene depends on the growth temperature and, at 900 degrees C, the graphene lattice is rotated at 22 +/- 8 degrees with respect to the Co lattice direction. Our work expands a possibility of synthesizing single-layer graphene over various metal catalysts. Moreover, our CVD growth gives a graphene film with predefined orientation, and thus can be applied to graphene engineering, such as cutting along a specific crystallographic direction, for future electronics applications.
引用
收藏
页码:7407 / 7414
页数:8
相关论文
共 32 条
[1]   Patterned Growth of Graphene over Epitaxial Catalyst [J].
Ago, Hiroki ;
Tanaka, Izumi ;
Orofeo, Carlo M. ;
Tsuji, Masaharu ;
Ikeda, Ken-ichi .
SMALL, 2010, 6 (11) :1226-1233
[2]  
[Anonymous], 1958, Constitution of Binary Alloys
[3]  
Bae S, 2010, NAT NANOTECHNOL, V5, P574, DOI [10.1038/nnano.2010.132, 10.1038/NNANO.2010.132]
[4]   Electronic confinement and coherence in patterned epitaxial graphene [J].
Berger, Claire ;
Song, Zhimin ;
Li, Xuebin ;
Wu, Xiaosong ;
Brown, Nate ;
Naud, Cecile ;
Mayou, Didier ;
Li, Tianbo ;
Hass, Joanna ;
Marchenkov, Atexei N. ;
Conrad, Edward H. ;
First, Phillip N. ;
de Heer, Wait A. .
SCIENCE, 2006, 312 (5777) :1191-1196
[5]   EPITAXY OF FCC METALS ON DIELECTRIC SUBSTRATES [J].
BIALAS, H ;
HENEKA, K .
VACUUM, 1994, 45 (01) :79-87
[6]   Anisotropic Etching and Nanoribbon Formation in Single-Layer Graphene [J].
Campos, Leonardo C. ;
Manfrinato, Vitor R. ;
Sanchez-Yamagishi, Javier D. ;
Kong, Jing ;
Jarillo-Herrero, Pablo .
NANO LETTERS, 2009, 9 (07) :2600-2604
[7]   Raman fingerprint of charged impurities in graphene [J].
Casiraghi, C. ;
Pisana, S. ;
Novoselov, K. S. ;
Geim, A. K. ;
Ferrari, A. C. .
APPLIED PHYSICS LETTERS, 2007, 91 (23)
[8]   Crystallographic etching of few-layer graphene [J].
Datta, Sujit S. ;
Strachan, Douglas R. ;
Khamis, Samuel M. ;
Johnson, A. T. Charlie .
NANO LETTERS, 2008, 8 (07) :1912-1915
[9]   Continuous, Highly Flexible, and Transparent Graphene Films by Chemical Vapor Deposition for Organic Photovoltaics [J].
De Arco, Lewis Gomez ;
Zhang, Yi ;
Schlenker, Cody W. ;
Ryu, Koungmin ;
Thompson, Mark E. ;
Zhou, Chongwu .
ACS NANO, 2010, 4 (05) :2865-2873
[10]   Synthesis, Transfer, and Devices of Single- and Few-Layer Graphene by Chemical Vapor Deposition [J].
De Arco, Lewis Gomez ;
Zhang, Yi ;
Kumar, Akshay ;
Zhou, Chongwu .
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2009, 8 (02) :135-138