Reduction of mosaic spread using iridium interlayers: A route to improved oxide heteroepitaxy on silicon

被引：33

作者：

Gsell, S.

Fischer, M.

Brescia, R.

Schreck, M. ^{[1
]}

Huber, P.

Bayer, F.

Stritzker, B.

Schlom, D. G.

机构：

[1] Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany

[2] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 06期

关键词：

D O I：

10.1063/1.2768003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using epitaxial SrTiO3 and yttria-stabilized zirconia (YSZ) buffer layers deposited on silicon as a starting point, epitaxial iridium layers were grown by electron-beam evaporation using a two-step growth process with an extremely low initial deposition rate. The iridium layers had in-plane (twist) and out-of-plane (tilt) full widths at half maximum as narrow as 0.08 degrees and 0.15 degrees, respectively, up to an order of magnitude narrower than the underlying SrTiO3 and YSZ layers. SrTiO3 and ZnO films grown on the iridium showed significantly narrower twist and tilt values than without the iridium interlayer, demonstrating a route to improved oxide heteroepitaxy on silicon.

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页数：3

相关论文

共 21 条

[1] High epitaxial quality Y2O3 high-κ dielectric on vicinal Si(001) surfaces [J].

Apostolopoulos, G ;

Vellianitis, G ;

Dimoulas, A ;

Alexe, M ;

Scholz, R ;

Fanciulli, M ;

Dekadjevi, DT ;

Wiemer, C .

APPLIED PHYSICS LETTERS, 2002, 81 (19) :3549-3551

[2] ArF and KrF excimer laser deposition of yttria-stabilized zirconia on Si(100) [J].

Delgado, JC ;

Sanchez, F ;

Aguiar, R ;

Maniette, Y ;

Ferrater, C ;

Varela, M .

APPLIED PHYSICS LETTERS, 1996, 68 (08) :1048-1050

[3] EPITAXIAL MGO ON SI(001) FOR Y-BA-CU-O THIN-FILM GROWTH BY PULSED LASER DEPOSITION [J].

FORK, DK ;

PONCE, FA ;

TRAMONTANA, JC ;

GEBALLE, TH .

APPLIED PHYSICS LETTERS, 1991, 58 (20) :2294-2296

[4] Interface structure and thermal stability of epitaxial SrTiO3 thin films on Si(001) [J].

Goncharova, L. V. ;

Starodub, D. G. ;

Garfunkel, E. ;

Gustafsson, T. ;

Vaithyanathan, V. ;

Lettieri, J. ;

Schlom, D. G. .

JOURNAL OF APPLIED PHYSICS, 2006, 100 (01)

[5] A route to diamond wafers by epitaxial deposition on silicon via iridium/yttria-stabilized zirconia buffer layers [J].

Gsell, S ;

Bauer, T ;

Goldfuss, J ;

Schreck, M ;

Stritzker, B .

APPLIED PHYSICS LETTERS, 2004, 84 (22) :4541-4543

[6] Epitaxial Ir layers on SrTiO3 as substrates for diamond nucleation:: deposition of the films and modification in the CVD environment [J].

Hörmann, F ;

Roll, H ;

Schreck, M ;

Stritzker, B .

DIAMOND AND RELATED MATERIALS, 2000, 9 (3-6) :256-261

[7] Thermodynamic stability of binary oxides in contact with silicon [J].

Hubbard, KJ ;

Schlom, DG .

JOURNAL OF MATERIALS RESEARCH, 1996, 11 (11) :2757-2776

[8]

ICKERT L, 1983, WACHSTUM EINKRISTALL, P141

[9] EPITAXIAL-GROWTH OF CEO2 LAYERS ON SILICON [J].

INOUE, T ;

YAMAMOTO, Y ;

KOYAMA, S ;

SUZUKI, S ;

UEDA, Y .

APPLIED PHYSICS LETTERS, 1990, 56 (14) :1332-1333

[10] EPITAXIAL AL2O3 FILMS ON SI BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION [J].

ISHIDA, M ;

KATAKABE, I ;

NAKAMURA, T ;

OHTAKE, N .

APPLIED PHYSICS LETTERS, 1988, 52 (16) :1326-1328