Stoichiometry effects and the Moss-Burstein effect for InN

被引：38

作者：

Butcher, KSA ^{[1
]}

Hirshy, H

Perks, RM

Wintrebert-Fouquet, M

Chen, PPT

机构：

[1] Macquarie Univ, Dept Phys, N Ryde, NSW 2109, Australia

[2] Cardiff Univ, Cardiff Sch Engn, Cardiff CF24 3AA, S Glam, Wales

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2006年 / 203卷 / 01期

关键词：

D O I：

10.1002/pssa.200563504

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We examine the Moss-Burstein effect for InN and demonstrate an independent method for determing its magnitude for high carrier concentration material. Consequently it is shown that the extent of the Moss-Burstein effect is less than 0.72 eV for a high carrier concentration sample with a 1.88 eV absorption edge. Early results are also provided for high band-gap low carrier concentration InN films that can be grown reprodcibly, vindicating the work of early groups in the field. The role of stoichiometry is examined in relation to point defects that appear to be common to many forms of InN.(c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：66 / 74

页数：9

共 39 条

[1] InN, latest development and a review of the band-gap controversy [J].

Butcher, KSA ;

Tansley, TL .

SUPERLATTICES AND MICROSTRUCTURES, 2005, 38 (01) :1-37

[2] Nitrogen-rich indium nitride [J].

Butcher, KSA ;

Wintrebert-Fouquet, M ;

Chen, PPT ;

Tansley, TL ;

Dou, H ;

Shrestha, SK ;

Timmers, H ;

Kuball, M ;

Prince, KE ;

Bradby, JE .

JOURNAL OF APPLIED PHYSICS, 2004, 95 (11) :6124-6128

[3]

BUTCHER KSA, UNPUB NITROGEN RELAT

[4] Correlation between strain, optical and electrical properties of InN grown by MBE [J].

Cimalla, V ;

Förster, C ;

Kittler, G ;

Cimalla, I ;

Kosiba, R ;

Ecke, G ;

Ambacher, O ;

Goldhahn, R ;

Shokhovets, S ;

Georgakilas, A ;

Lu, H ;

Schaff, W .

5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 2003, 0 (07) :2818-2821

[5]

Davydov VY, 2002, PHYS STATUS SOLIDI B, V230, pR4, DOI 10.1002/1521-3951(200204)230:2<R4::AID-PSSB99994>3.0.CO

[6]

2-Z

[7]

Goldhahn R, 2003, MATER RES SOC SYMP P, V743, P361

[8]

Haddad DB, 2003, MATER RES SOC SYMP P, V743, P701

[9]

HADDAD DB, 2004, MATER RES SOC S P, V798

[10] Plasma-assisted MBE growth of InN films and InAlN/InN heterostructures [J].

Higashiwaki, M ;

Matsui, T .

JOURNAL OF CRYSTAL GROWTH, 2003, 251 (1-4) :494-498

← 1 2 3 4 →