Low-loss, high-voltage 6H-SiC epitaxial p-i-n diode

被引：41

作者：

Fujihira, K ^{[1
]}

Tamura, S ^{[1
]}

Kimoto, T ^{[1
]}

Matsunami, H ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6068501, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2002年 / 49卷 / 01期

关键词：

minority carrier lifetime; on-resistance; p-i-n diode; power device; SiC;

D O I：

10.1109/16.974762

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The p-i-n diodes were fabricated using 31-mum thick n(-) - and p-type 6H-SiC epilayers grown by horizontal cold-wall chemical vapor deposition (CVD) with nitrogen and aluminum doping, respectively. The diode exhibited a very high breakdown voltage of 4.2 kV with a low on-resistance of 4.6 mOmegacm(2). This on-resistance is lower (by a factor of five) than that of a Si p-i-n diode with a similar breakdown voltage. The leakage current density was substantially lower even at high temperatures. The fabricated SiC p-i-n diode showed fast switching with a turn-off time of 0.18 mus at 300 K. The carrier lifetime was estimated to be 0.64 mus at 300 K, and more than 5.20 mus at 500 K. Various characteristics of SiC p-i-n diodes which have an advantage of lower power dissipation owing to conductivity modulation were investigated.

引用

页码：150 / 154

页数：5

共 17 条

[1]

[Anonymous], P MAT RES SOC S

[2]

BALIGA BJ, 1996, POWER SEMICONDUCTOR, pCH4

[3]

BALIGA BJ, 1996, POWER SEMICONDUCTORS, pCH2

[4] COMPARISON OF 6H-SIC, 3C-SIC, AND SI FOR POWER DEVICES [J].

BHATNAGAR, M ;

BALIGA, BJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (03) :645-655

[5] Performance limiting surface defects in SiC epitaxial p-n junction diodes [J].

Kimoto, T ;

Miyamoto, N ;

Matsunami, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (03) :471-477

[6] A 4.5 KV 6H SILICON-CARBIDE RECTIFIER [J].

KORDINA, O ;

BERGMAN, JP ;

HENRY, A ;

JANZEN, E ;

SAVAGE, S ;

ANDRE, J ;

RAMBERG, LP ;

LINDEFELT, U ;

HERMANSSON, W ;

BERGMAN, K .

APPLIED PHYSICS LETTERS, 1995, 67 (11) :1561-1563

[7] High voltage SiC diodes with small recovery time [J].

Levinshtein, ME ;

Mnatsakanov, TT ;

Ivanov, PA ;

Palmour, JW ;

Rumyantsev, SL ;

Singh, R ;

Yurkov, SN .

ELECTRONICS LETTERS, 2000, 36 (14) :1241-1242

[8] Step-controlled epitaxial growth of SiC: high quality homoepitaxy [J].

Matsunami, H ;

Kimoto, T .

MATERIALS SCIENCE & ENGINEERING R-REPORTS, 1997, 20 (03) :125-166

[9] Switching behaviour of fast high voltage SiC pn-diodes [J].

Mitlehner, H ;

Friedrichs, P ;

Peters, D ;

Schorner, R ;

Weinert, U ;

Weis, B ;

Stephani, D .

ISPSD '98 - PROCEEDINGS OF THE 10TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 1998, :127-130

[10] 2000-V 6H-SIC P-N-JUNCTION DIODES GROWN BY CHEMICAL-VAPOR-DEPOSITION [J].

NEUDECK, PG ;

LARKIN, DJ ;

POWELL, JA ;

MATUS, LG ;

SALUPO, CS .

APPLIED PHYSICS LETTERS, 1994, 64 (11) :1386-1388

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