MgxZn1-xO-based photodetectors covering the whole solar-blind spectrum range

被引：161

作者：

Ju, Z. G. ^{[1
,2
]}

Shan, C. X. ^{[1
]}

Jiang, D. Y. ^{[1
,2
]}

Zhang, J. Y. ^{[1
]}

Yao, B. ^{[1
]}

Zhao, D. X. ^{[1
]}

Shen, D. Z. ^{[1
]}

Fan, X. W. ^{[1
]}

机构：

[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Key Lab Excited State Proc, Changchun 130033, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 17期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.3002371

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A series of Mg(x)Zn(1-x)O thin films has been prepared by metalorganic chemical vapor deposition and metal-semiconductor-metal structured ultraviolet photodetectors are fabricated from these films. The cutoff wavelengths of the photodetectors can cover the whole solar-blind spectrum range (220-280 nm) by varying Mg content in the Mg(x)Zn(1-x)O thin films. As a representative, the photodetector fabricated from Mg(0.52)Zn(0.48)O shows an ultraviolet/visible rejection ratio of about four orders of magnitude, and the dark current is 15 pA at 10 V bias. These results demonstrate that high-performance photodetectors operating in the whole solar-blind spectrum range can be realized in Mg(x)Zn(1-x)O films. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3002371]

引用

页数：3

共 22 条

[1] Indium-silicon co-doping of high-aluminum-content AlGaN for solar blind photodetectors [J].