Annealing effect on the optical properties of implanted silicon in a silicon nitride matrix

被引：20

作者：

Cen, Z. H. ^{[1
]}

Chen, T. P. ^{[1
]}

Ding, L. ^{[1
]}

Liu, Y. ^{[1
]}

Yang, M. ^{[1
]}

Wong, J. I. ^{[1
]}

Liu, Z. ^{[1
]}

Liu, Y. C. ^{[2
]}

Fung, S. ^{[3
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] Singapore Inst Mfg Technol, Singapore 638075, Singapore

[3] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 02期

基金：

澳大利亚研究理事会; 新加坡国家研究基金会;

关键词：

D O I：

10.1063/1.2962989

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optical properties of implanted Si in a silicon nitride (Si(3)N(4)) thin film have been determined with spectroscopic ellipsometry based on the Tauc-Lorentz (TL) model and the Bruggeman effective medium approximation. It is shown that the suppressed dielectric functions of the implanted Si are dominated by the energy transitions related to the critical point E(2). The effect of thermal annealing on the dielectric functions of the implanted Si has been investigated. The analysis of the dielectric functions based on the evolution of the TL parameters can provide an insight into the structural changes in the implanted Si embedded in the Si(3)N(4) matrix caused by the annealing. (C) 2008 American Institute of Physics.

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