Fabrication of zinc oxide nanorods based heterojunction devices using simple and economic chemical solution method

被引：45

作者：

Reddy, N. Koteeswara ^{[1
]}

Ahsanulhaq, Q. ^{[1
]}

Hahn, Y. B. ^{[1
]}

机构：

[1] Chonbuk Natl Univ, Sch Semicond & Chem Engn, BK 21 Ctr Future Energy Mat & Devices, Jeonju 561756, South Korea

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 08期

关键词：

D O I：

10.1063/1.2975829

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter we reported the behavior of zinc oxide nanorods/gallium nitride (ZnO/GaN) heterojunctions at different temperatures. The well-aligned ZnO nanorods were synthesized on GaN coated alumina (Al2O3) substrate using a solution method at lower temperatures. The as-grown p-n junction diode exhibited a low turn-on voltage of similar to 0.65 V with an excellent rectifying behavior. While increasing temperature, the series resistance of the device slightly increased due to the formation of metallic bonds between metal and semiconductor. These results, therefore, emphasize that the as-grown heterostructures are quite stable even at higher temperatures. (c) 2008 American Institute of Physics.

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