Optically detected magnetic resonance study of CdS/HgS/CdS quantum dot quantum wells

被引：52

作者：

Lifshitz, E ^{[1
]}

Porteanu, H

Glozman, A

Weller, H

Pflughoefft, M

Echymüller, A

机构：

[1] Technion Israel Inst Technol, Dept Chem, IL-32000 Haifa, Israel

[2] Technion Israel Inst Technol, Inst Solid State, IL-32000 Haifa, Israel

[3] Univ Hamburg, Inst Phys Chem, D-20146 Hamburg, Germany

来源：

JOURNAL OF PHYSICAL CHEMISTRY B | 1999年 / 103卷 / 33期

关键词：

D O I：

10.1021/jp990349c

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

CdS/HgS/CdS nanoparticles consist of a CdS core, epitaxially covered by one or two monolayers of HgS, and additional cladding layers of CdS. The luminescence spectrum of the studied materials contains a dominant exciton band located at the HgS layer and an additional nonexcitonic band, presumably corresponding to the recombination of trapped carriers. The present paper describes our efforts to identify the influence of CdS/HgS/CdS interfaces on the localization of the photogenerated species. These properties were investigated by the utilization of optically detected magnetic resonance spectroscopy. The results have shown the existence of two kinds of electron-hole recombination, trapped either at a twin packing of a CdS/HgS interface or at an edge dislocation of an epitaxial HgS or a CdS cladding layer.

引用

页码：6870 / 6875

页数：6

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