Mapping strain fields in ultrathin bonded Si wafers by x-ray scattering

被引：6

作者：

Nielsen, M ^{[1
]}

Poulsen, M

Bunk, O

Kumpf, C

Feidenhans'l, R

Johnson, RL

Jensen, F

Grey, F

机构：

[1] Riso Natl Lab, DK-4000 Roskilde, Denmark

[2] Univ Hamburg, Inst Expt Phys 2, D-22761 Hamburg, Germany

[3] Tech Univ Denmark, Mikroelekt Ctr, DK-2800 Lyngby, Denmark

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 18期

关键词：

D O I：

10.1063/1.1476702

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

X-ray scattering reveals the atomic displacements arising from rotational misalignment in ultrathin silicon bonded wafers. For a 4.3 nm top wafer, the strain field penetrates from the bonded interface to the surface and produces distinctive finite-size oscillations in x-ray data. Analytical calculations permit the atomic displacements throughout the thin top wafer to be modeled. (C) 2002 American Institute of Physics.

引用

页码：3412 / 3414

页数：3

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