Lateral ordering of quantum dots by periodic subsurface stressors

被引:89
作者
Romanov, AE [1 ]
Petroff, PM
Speck, JS
机构
[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
关键词
D O I
10.1063/1.123824
中图分类号
O59 [应用物理学];
学科分类号
摘要
We investigate the possibility of using subsurface dislocation arrays as a tool for controlling the nucleation of self-assembled quantum dots (SAQDs). A quantitative model predicts that periodic nonuniform elastic fields on the surface induced by dislocations may control the lateral ordering SAQDs. The effect of dislocations is shown to be comparable to the interaction between buried and surface dots which leads to vertical dot stacking. The periodic subsurface dislocation arrays necessary for dot ordering can be produced by twist wafer bonding and backside substrate removal. (C) 1999 American Institute of Physics. [S0003-6951(99)00916-X].
引用
收藏
页码:2280 / 2282
页数:3
相关论文
共 18 条
[1]   A simple method for calculating strain distributions in quantum dot structures [J].
Downes, JR ;
Faux, DA ;
OReilly, EP .
JOURNAL OF APPLIED PHYSICS, 1997, 81 (10) :6700-6702
[2]   DISLOCATION-FREE STRANSKI-KRASTANOW GROWTH OF GE ON SI(100) [J].
EAGLESHAM, DJ ;
CERULLO, M .
PHYSICAL REVIEW LETTERS, 1990, 64 (16) :1943-1946
[3]   Lattice engineered compliant substrate for defect-free heteroepitaxial growth [J].
Ejeckam, FE ;
Lo, YH ;
Subramanian, S ;
Hou, HQ ;
Hammons, BE .
APPLIED PHYSICS LETTERS, 1997, 70 (13) :1685-1687
[4]  
FREUND LB, 1995, INT J SOLIDS STRUCT, V32, P337
[5]   STRESS-CONCENTRATION AT SLIGHTLY UNDULATING SURFACES [J].
GAO, HJ .
JOURNAL OF THE MECHANICS AND PHYSICS OF SOLIDS, 1991, 39 (04) :443-458
[6]   INAS/GAAS PYRAMIDAL QUANTUM DOTS - STRAIN DISTRIBUTION, OPTICAL PHONONS, AND ELECTRONIC-STRUCTURE [J].
GRUNDMANN, M ;
STIER, O ;
BIMBERG, D .
PHYSICAL REVIEW B, 1995, 52 (16) :11969-11981
[7]  
Hirth J. P., 1982, THEORY DISLOCATIONS
[8]   EQUILIBRIUM SURFACE-ROUGHNESS OF A STRAINED EPITAXIAL FILM DUE TO SURFACE-DIFFUSION INDUCED BY INTERFACE MISFIT DISLOCATIONS [J].
JONSDOTTIR, F ;
FREUND, LB .
MECHANICS OF MATERIALS, 1995, 20 (04) :337-349
[9]   CRITICAL LAYER THICKNESS FOR SELF-ASSEMBLED INAS ISLANDS ON GAAS [J].
LEONARD, D ;
POND, K ;
PETROFF, PM .
PHYSICAL REVIEW B, 1994, 50 (16) :11687-11692
[10]   DIRECT FORMATION OF QUANTUM-SIZED DOTS FROM UNIFORM COHERENT ISLANDS OF INGAAS ON GAAS-SURFACES [J].
LEONARD, D ;
KRISHNAMURTHY, M ;
REAVES, CM ;
DENBAARS, SP ;
PETROFF, PM .
APPLIED PHYSICS LETTERS, 1993, 63 (23) :3203-3205