Directed Self-Assembly of Diblock Copolymer Thin Films on Chemically-Patterned Substrates for Defect-Free Nano-Patterning

被引:104
作者
Tada, Yasuhiko [2 ]
Akasaka, Satoshi [1 ]
Yoshida, Hiroshi [2 ]
Hasegawa, Hirokazu [1 ]
Dobisz, Elizabeth [3 ]
Kercher, Dan [3 ]
Takenaka, Mikihito [1 ]
机构
[1] Kyoto Univ, Grad Sch Engn, Dept Polymer Chem, Nishikyo Ku, Kyoto 6158510, Japan
[2] Hitachi Ltd, Mat Res Lab, Ibaraki 3191292, Japan
[3] Hitachi Global Storage Technol, San Jose Res Ctr, San Jose, CA 95135 USA
关键词
D O I
10.1021/ma801542y
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
We demonstrate that polystyrene-block-poly(methylmethacrylate) (PS-b-PMMA) can self-assemble in a well-aligned, long-range ordered nanopattern over arbitrarily large areas, commensurate with chemically prepatterned templates prepared by electron beam (EB) lithography. The epitaxially grown cylindrical microdomain formed a defect-free hexagonal lattice although the Chemically-Patterned substrate had some defects in its pattern and errors in pattern position. Furthermore, we demonstrated that the self-assembly process can interpolate points in between the EB generated pattern, thus multiplying the pattern density. The result suggests that the self-assembly of PS-b-PMMA can repair the defects of the patterned substrate, while the patterned substrate can align the domain structures of block copolymer into a long-range ordered single array. The developed process, which combines EB lithography and self-assembly of diblock copolymer provides a promising fabrication method for extension of top down-type lithographic capabilities to very high densities.
引用
收藏
页码:9267 / 9276
页数:10
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