Dynamics of exciton formation at the Si(100) c(4x2) surface -: art. no. 126801

被引：115

作者：

Weinelt, M

Kutschera, M

Fauster, T

Rohlfing, M

机构：

[1] Univ Erlangen Nurnberg, Lehrstuhl Festkorperphys, D-91058 Erlangen, Germany

[2] Int Univ Bremen, Sch Sci & Engn, D-28725 Bremen, Germany

来源：

PHYSICAL REVIEW LETTERS | 2004年 / 92卷 / 12期

关键词：

D O I：

10.1103/PhysRevLett.92.126801

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Carrier recombination at the Si(100) c(4x2) surface and the underlying surface electronic structure is unraveled by a combination of two-photon photoemission and many-body perturbation theory: An electron excited to the silicon conduction band by a femtosecond infrared laser pulse scatters within 220 ps to the unoccupied surface band, needs 1.5 ps to jump to the band bottom via emission of optical phonons, and finally relaxes within 5 ps with an excited hole in the occupied surface band to form an exciton living for nanoseconds.

引用

收藏

页码：126801 / 1

页数：4

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