Ultrafast carrier dynamics in silicon: A two-color transient reflection grating study on a (111)surface

被引:172
作者
Sjodin, T
Petek, H
Dai, HL [1 ]
机构
[1] Univ Penn, Res Struct Matter Lab, Dept Chem, Philadelphia, PA 19104 USA
[2] Hitachi Ltd, Adv Res Lab, Hatoyama, Saitama 35003, Japan
关键词
D O I
10.1103/PhysRevLett.81.5664
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The dynamics of excited carriers generated near a silicon surface were characterized on femtosecond time scales using the transient grating technique in the reflection configuration. For electrons in the energy range 1.4 +/- 0.6 eV above the conduction band edge and their corresponding holes, the lifetime for relaxation through phonon scattering at carrier densities below 10(20) cm(-3) was determined to be 240 fs. This relaxation time increased sharply for carrier densities higher than 5 X 10(20) cm(-3), providing the first direct evidence for charge screening of carrier-phonon scattering in Si.
引用
收藏
页码:5664 / 5667
页数:4
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