Ultrafast carrier dynamics in silicon: A two-color transient reflection grating study on a (111)surface

被引：174

作者：

Sjodin, T

Petek, H

Dai, HL ^{[1
]}

机构：

[1] Univ Penn, Res Struct Matter Lab, Dept Chem, Philadelphia, PA 19104 USA

[2] Hitachi Ltd, Adv Res Lab, Hatoyama, Saitama 35003, Japan

来源：

PHYSICAL REVIEW LETTERS | 1998年 / 81卷 / 25期

关键词：

D O I：

10.1103/PhysRevLett.81.5664

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The dynamics of excited carriers generated near a silicon surface were characterized on femtosecond time scales using the transient grating technique in the reflection configuration. For electrons in the energy range 1.4 +/- 0.6 eV above the conduction band edge and their corresponding holes, the lifetime for relaxation through phonon scattering at carrier densities below 10(20) cm(-3) was determined to be 240 fs. This relaxation time increased sharply for carrier densities higher than 5 X 10(20) cm(-3), providing the first direct evidence for charge screening of carrier-phonon scattering in Si.

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页码：5664 / 5667

页数：4

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