Photoexcited carrier diffusion near a Si(111) surface: Non-negligible consequence of carrier-carrier scattering

被引:55
作者
Li, CM [1 ]
Sjodin, T [1 ]
Dai, HL [1 ]
机构
[1] Univ Penn, Res Struct Matter Lab, Philadelphia, PA 19104 USA
来源
PHYSICAL REVIEW B | 1997年 / 56卷 / 23期
关键词
D O I
10.1103/PhysRevB.56.15252
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Photocarrier diffusion in Si at ambient temperature in the carrier density range of 4x10(17) to 4 x 10(19) cm(-3) has been characterized by the transient grating technique. Measurements show a strong density dependence in ambipolar diffusivity with a minimum of 4.7 cm(2) s(-1), a factor of 4 lower than the intrinsic value, at 10(19) cm(-3). The decrease is a result of carrier-carrier scattering at high densities. Measurements on both a Si(111) surface (reflection geometry) and a Si film (transmission geometry) indicate that there is no significant surface effect in diffusivity for carriers generated near the surface.
引用
收藏
页码:15252 / 15255
页数:4
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