Photoexcited carrier diffusion near a Si(111) surface: Non-negligible consequence of carrier-carrier scattering

被引：55

作者：

Li, CM ^{[1
]}

Sjodin, T ^{[1
]}

Dai, HL ^{[1
]}

机构：

[1] Univ Penn, Res Struct Matter Lab, Philadelphia, PA 19104 USA

来源：

PHYSICAL REVIEW B | 1997年 / 56卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.56.15252

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photocarrier diffusion in Si at ambient temperature in the carrier density range of 4x10(17) to 4 x 10(19) cm(-3) has been characterized by the transient grating technique. Measurements show a strong density dependence in ambipolar diffusivity with a minimum of 4.7 cm(2) s(-1), a factor of 4 lower than the intrinsic value, at 10(19) cm(-3). The decrease is a result of carrier-carrier scattering at high densities. Measurements on both a Si(111) surface (reflection geometry) and a Si film (transmission geometry) indicate that there is no significant surface effect in diffusivity for carriers generated near the surface.

引用

页码：15252 / 15255

页数：4

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