THE ROLE OF INTERCARRIER SCATTERING IN EXCITED SILICON

被引：29

作者：

GRIVITSKAS, V ^{[1
]}

WILLANDER, M ^{[1
]}

VAITKUS, J ^{[1
]}

机构：

[1] ROYAL INST TECHNOL, DEPT PHYS, S-10044 STOCKHOLM 70, SWEDEN

来源：

SOLID-STATE ELECTRONICS | 1984年 / 27卷 / 06期

关键词：

D O I：

10.1016/0038-1101(84)90188-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：565 / 572

页数：8

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