Very thin film crystalline silicon solar cells on glass substrate fabricated at low temperature

被引：69

作者：

Yamamoto, K ^{[1
]}

机构：

[1] Kaneka Corp, Cent Res Labs, Kobe, Hyogo 652, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1999年 / 46卷 / 10期

关键词：

optical scattering; photovoltaic cell measurements; p-i-n photodiodes; plasma CVD; thin films; silicon;

D O I：

10.1109/16.791994

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The performances of thin-film poly-Si solar cells with a thickness of less than 5 mu m on a glass substrate have been investigated. The cell of glass/back reflector/n-i-p-type Si/ITO is well characterized by the structure of naturally surface texture and enhanced absorption with a back reflector (STAR), where the active i-type poly-Si layer was fabricated by plasma chemical vapor deposition (CVD) at low temperature. The cell with a thickness of 2.0 mu m demonstrated an intrinsic efficiency of 10.7% (aperture 10.1%), the open-circuit voltage of 0.539 V and the short current density of 25.8 mA/cm(2) as independently confirmed ba Japan Quality Assurance, which shows the no clear light-induced degradation. The optical and transport properties of poly-Si cells are summarized.

引用

页码：2041 / 2047

页数：7

共 20 条

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[20] [No title captured]

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