Composition, volume, and aspect ratio dependence of the strain distribution, band lineups and electron effective masses in self-assembled pyramidal In1-xGaxAs/GaAs and SixGe1-x/Si quantum dots

We present a systematic investigation of the strain distribution of self-assembled pyramidal In1-xGaxAs/GaAs and SixGe1-x/Si quantum dots for the case of growth on a (001) substrate. The dependence of the biaxial and hydrostatic components of the strain on the quantum dot volume, aspect ratio, composition, and percentage of alloying x is studied using a method based on a Green's function technique. The dependence of the carriers' confining potentials and the electronic effective mass on the same parameters is then calculated in the framework of eight-band k .p theory. The results for which comparable published data are available are in good agreement with the theoretical values for strain profiles, confining potentials, and electronic effective mass. (C) 2002 American Institute of Physics.