A PE-MOCVD route to V2O5 nanostructured thin films

被引：5

作者：

Barreca, D

Battiston, GA

Caccavalec, F

di Noto, V

Gerbasi, R

Gregori, A

Rizzi, GA

Tiziani, A

Tondello, E

机构：

[1] Univ Padua, Dipartimento Chim Inorgan Metallorgan & Analit, Ctr Studio Stabilita & Reattivita Composti Coordi, I-35131 Padua, Italy

[2] CNR, Ist Chim & Tecnol Inorgan Mat Avanzati, I-35127 Padua, Italy

[3] Univ Padua, Dipartimento Fis, INFM, I-35131 Padua, Italy

[4] Univ Padua, DTG, I-36100 Vicenza, Italy

来源：

JOURNAL DE PHYSIQUE IV | 1999年 / 9卷 / P8期

关键词：

D O I：

10.1051/jp4:1999866

中图分类号：

O4 [物理学];

学科分类号：

0702 [物理学];

摘要：

Vanadium pentoxide thin films are grown on glass and borosilicate substrates by PACVD using a vanadyl (IV) beta-diketonate as precursor. The depositions are can-led out in an RF-plasma reactor with Ar-O-2 mixtures and soft process conditions, obtaining high-purity nanocrysralline layers with a strong preferential orientation. The microstructural and morphological characteristics of the films, analyzed respectively by XRD and AFM, show that the sample features can be accurately tailored by an adequate choice of the synthesis conditions. The composition and purity of the films are studied by XPS and SIMS analyses. Impedance Spectroscopy is used to study the conductivity of the layers and the dependence of electrical properties on microstructure.

引用

页码：529 / 536

页数：8

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