Pulsed-laser-deposited epitaxial Sr2FeMoO6-y thin films:: Positive and negative magnetoresistance regimes

被引：90

作者：

Asano, H ^{[1
]}

Ogale, SB

Garrison, J

Orozco, A

Li, YH

Li, E

Smolyaninova, V

Galley, C

Downes, M

Rajeswari, M

Ramesh, R

Venkatesan, T

机构：

[1] Univ Maryland, NSF, MRSEC Oxides Surfaces & Probes, College Pk, MD 20742 USA

[2] Univ Maryland, Ctr Superconduct Res, Dept Phys, College Pk, MD 20742 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 24期

关键词：

D O I：

10.1063/1.123224

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial thin films of ordered double-perovskite Sr2FeMoO6-y are deposited on (001) SrTiO3 substrates by pulsed-laser deposition using a two step growth process. Selection of growth conditions is found to lead to either highly conductive metallic thin films (residual resistivity of about 1 mu Omega cm) or semiconducting films. The metallic films show a positive magnetoresistance (MR) as high as 35%, while the semiconducting films show a negative MR of -3%, at a temperature of 5 K and a field of 8 T. (C) 1999 American Institute of Physics. [S0003-6951(99)03024-7].

引用

页码：3696 / 3698

页数：3

共 21 条

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