Formation of defects in the oxide layer of ion-irradiated Si/SiO2 structures

被引：4

作者：

Baraban, AP ^{[1
]}

Miloglyadova, LV ^{[1
]}

机构：

[1] St Petersburg State Univ, Inst Phys Res, St Petersburg 198904, Russia

来源：

TECHNICAL PHYSICS | 2002年 / 47卷 / 05期

关键词：

D O I：

10.1134/1.1479984

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electroluminescence and high-frequency voltage-capacitance methods are used to study Si/SiO2 structures obtained by thermal oxidation of KEF-5 (100)Si wafers at 950degreesC in wet oxygen (oxide thickness 250 nm). The structures are irradiated by 130-keV argon ions with doses in the range of 10(13)-3.2 x 10(17) cm(-2). A correlation between the origin, properties, and formation mechanism of implantation-induced defects in the oxide layer is established, and a model of defect formation is proposed. (C) 2002 MAIK "Nauka/Interperiodica".

引用

页码：569 / 573

页数：5

共 7 条

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