Demonstration of a four state sensing scheme for a single pseudo-spin valve GMR bit

被引：17

作者：

Zhang, RL ^{[1
]}

Hassoun, MM ^{[1
]}

Black, WC ^{[1
]}

Das, B ^{[1
]}

Wong, KA ^{[1
]}

机构：

[1] Iowa State Univ, Dept ECPE, Ames, IA 50011 USA

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1999年 / 35卷 / 05期

关键词：

GMR; MRAM; sense amplifier; four-state logic; comparator;

D O I：

10.1109/20.800994

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simple and fast method for sensing four states from a single Pseudo-Spin Valve GMR device is presented. Four state sensing shows promise of doubling the potential bit density of Magnetic Random Access Memory (MRAM) and related devices. A new two step method to detect the GMR bit information has been developed here that is simple to implement and which easily allows for compensation of rapid self-heating effects.

引用

页码：2829 / 2831

页数：3

共 8 条

[1]

[Anonymous], IEEE J SOLID STATE C

[2] GIANT MAGNETORESISTANCE OF (001)FE/(001) CR MAGNETIC SUPERLATTICES [J].