Total-dose issues for microelectronics in space systems

被引:32
作者
Pease, RL
机构
[1] RLP Research
关键词
D O I
10.1109/23.490892
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Ionizing radiation has been a problem for space-system microelectronics from the earliest satellites. Much progress has made in understanding the physical been mechanisms that cause total-dose-induced failure, and this knowledge has been applied to hardened-technology development. Many of the hardened technologies are no longer available, however, and hence more commercial off-the-shelf components are being used. This situation presents a challenge for system designers, since the commercial parts typically have lower failure levels and larger variability in response. In addition, recent studies have uncovered new challenges for total-dose hardness assurance in the form of 1) an enhanced low dose-rate sensitivity of bipolar linear microcircuits, 2) an effect of burn in on CMOS microcircuit total-dose response, and 3) an enhanced effect of plastic packaging on the burned-in effect for CMOS circuits. These issues lid he addressed as they relate to the space-system ionizing radiation environment.
引用
收藏
页码:442 / 452
页数:11
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