Graphite formation on Ni film by chemical vapor deposition

被引:7
作者
Yudasaka, M [1 ]
Kikuchi, R [1 ]
Matsui, T [1 ]
Ohki, Y [1 ]
Baxendale, M [1 ]
Yoshimura, S [1 ]
Ota, E [1 ]
机构
[1] GUNMA UNIV,FAC ENGN,DEPT CHEM,KIRYU,GUMMA 376,JAPAN
关键词
graphite; nickel; chemical vapor deposition;
D O I
10.1016/0040-6090(95)08224-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thin film formation of graphite by chemical vapor deposition using 2-methyl-1,2'-naphthyl ketone as a starting material was carried out on Ni film substrates. On Ni films directly deposited on quartz glass, the graphite films were obtained when the Ni film thickness was above 1 000 Angstrom and above 5 000 Angstrom at 700 degrees C and 1 000 degrees C, respectively. Depositions on thinner Ni film substrates comprise amorphous carbon (a-C) or graphite tubes which was owing to the thermal coagulation of the Ni film into droplets, On the other hand, graphite film was obtained on the Ni film with thickness 10 Angstrom when a-C was inserted between the Ni film and the quartz glass. The coagulation of the Ni film is considered to be avoided by inserting a-C layer.
引用
收藏
页码:117 / 123
页数:7
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