Mechanism for Ohmic contact formation of Ti on n-type GaN investigated using synchrotron radiation photoemission spectroscopy

被引：55

作者：

Kim, JK ^{[1
]}

Jang, HW ^{[1
]}

Lee, JL ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, Kyungbuk, South Korea

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 91卷 / 11期

关键词：

D O I：

10.1063/1.1476085

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Changes of the work function of contact metal and the atomic composition at the vicinity of metal/GaN interface were studied in in situ annealed Ti on n-type GaN using synchrotron radiation photoemission spectroscopy. Ti layer transformed to TiN and its work function increased as annealing temperature increased. Meanwhile, the atomic composition ratio of Ga-to-N below the TiN contact increased indicating the creation of N vacancies. This provides evidence that N vacancies produced below the contact, acting as donors for electrons, play a main role in forming the Ohmic contact. (C) 2002 American Institute of Physics.

引用

页码：9214 / 9217

页数：4

共 11 条

[1]

Briggs D., 1978, SURF INTERFACE ANAL

[2] Current conduction mechanism of Si/Ti-based Ohmic contacts to n-GaN [J].

Kim, DW ;

Baik, HK .

APPLIED PHYSICS LETTERS, 2000, 77 (07) :1011-1013

[3]

Kubaschewski O., 1993, Materials Thermochemistry

[4] Microstructural evidence on electrical properties of Ta/Ti/Al and Ti/Ta/Al ohmic contacts to n-AlGaN/GaN [J].

Lim, SH ;

Washburn, J ;

Liliental-Weber, Z ;

Qiao, D .

APPLIED PHYSICS LETTERS, 2001, 78 (24) :3797-3799

[5] Analysis of a thin AlN interfacial layer in Ti/Al and Pd/Al ohmic contacts to n-type GaN [J].

Luther, BP ;

DeLucca, JM ;

Mohney, SE ;

Karlicek, RF .

APPLIED PHYSICS LETTERS, 1997, 71 (26) :3859-3861

[6]

Moulder J.F., 1995, HDB XRAY PHOTOELECTR

[7]

O'Connor D.J., 1992, SURFACE ANAL METHODS

[8] Reliable Ti/Al and Ti/Al/Ni/Au ohmic contacts to n-type GaN formed by vacuum annealing [J].

Papanicolaou, NA ;

Rao, MV ;

Mittereder, J ;

Anderson, WT .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (01) :261-267

[9] Low-resistance Ti/Al/Ti/Au multilayer ohmic contact to n-GaN [J].

Wang, DF ;

Feng, SW ;

Lu, C ;

Motayed, A ;

Jah, M ;

Mohammad, SN ;

Jones, KA ;

Salamanca-Riba, L .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (11) :6214-6217

[10] GaN (0001)-(1x1) surfaces: Composition and electronic properties [J].

Wu, CI ;

Kahn, A ;

Taskar, N ;

Dorman, D ;

Gallagher, D .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (08) :4249-4252

← 1 2 →