GaN (0001)-(1x1) surfaces: Composition and electronic properties

被引：120

作者：

Wu, CI

Kahn, A ^{[1
]}

Taskar, N

Dorman, D

Gallagher, D

机构：

[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

[2] Philips Labs, Briarcliff Manor, NY 10510 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 83卷 / 08期

关键词：

D O I：

10.1063/1.367182

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We use low energy electron diffraction, Auger electron spectroscopy, and ultraviolet and x-ray photoemission spectroscopy to study the surface structure, stoichiometry, and electronic properties of n- and p-type GaN (0001) grown by metal-organic chemical vapor deposition. Ordered (1 x 1) surfaces with nearly stoichiometric composition are prepared by nitrogen sputtering and annealing. The band bending is found to be 0.75+/-0.1 eV up and 0.75+/-0.1 eV down for n- and p-type samples, respectively. The work function, electron affinity, and Ga 3d core level binding energy are also determined. (C) 1998 American Institute of Physics.

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页码：4249 / 4252

页数：4

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