Photoemission spectroscopy studies of the surface of GaN films grown by vapor phase epitaxy

被引：29

作者：

Ma, J

Garni, B

Perkins, N

OBrien, WL

Kuech, TF

Lagally, MG

机构：

[1] University of Wisconsin-Madison, Madison

[2] Synchrotron Radiation Center, University of Wisconsin-Madison, Stoughton

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 22期

关键词：

D O I：

10.1063/1.117303

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Surfaces of GaN films have been investigated with photoemission spectroscopy. The measured valence band is in good agreement with band structure calculations and correlates well with tunneling luminescence measurements performed on the same samples. The effect of N depletion on band structure is explored, clarifying disagreements in previous photoemission measurements. (C) 1996 American Institute of Physics.

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收藏

页码：3351 / 3353

页数：3

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