WORK FUNCTION, ELECTRON-AFFINITY, AND BAND BENDING AT DECAPPED GAAS(100) SURFACES

被引:94
作者
CHEN, W
DUMAS, M
MAO, D
KAHN, A
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 04期
关键词
D O I
10.1116/1.586217
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Work function and band bending measurements are performed on n- and p-type GaAs(100) surfaces prepared by molecular-beam epitaxy and As decapping. The band bending is almost independent of the decapping temperature and surface reconstruction [(1 x 1) --> C(4 X 4) --> C(2 X 8) --> (4 X 2)]. The work function and electron affinity undergo large and systematic variations of up to 400 meV which consistently establish maxima and minima of these quantities for the (2 X 4)-C(2 X 8) and (4 X 2)-C(8 X 2) structures, respectively. These variations are due to surface dipoles induced by charge exchanges between the cation and anion dangling bonds in the top two layers of the crystals. These charge exchanges are fully explained by applying a simple electron counting model to each reconstruction.
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页码:1886 / 1890
页数:5
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