IONIZATION-ENERGY DEPENDENCE ON GAAS(001) SURFACE SUPERSTRUCTURE MEASURED BY PHOTOEMISSION-YIELD SPECTROSCOPY

被引：10

作者：

HIROSE, K ^{[1
]}

FOXMAN, E ^{[1
]}

NOGUCHI, T ^{[1
]}

UDA, M ^{[1
]}

机构：

[1] WASEDA UNIV, SHINJUKU KU, TOKYO 160, JAPAN

来源：

PHYSICAL REVIEW B | 1990年 / 41卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.41.6076

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The ionization energies for GaAs(001) are determined by photoemission-yield spectroscopy as a function of surface superstructure. The ionization energy changes by as much as 0.5 eV in accordance with the surface superstructure. © 1990 The American Physical Society.

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页码：6076 / 6078

页数：3

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