SEMICONDUCTOR SURFACE-STATE SPECTROSCOPY

被引：25

作者：

GUICHAR, GM

BALKANSKI, M

SEBENNE, CA

机构：

[1] Laboratoire de Physique des Solides, l'Université P., M. Curie. Associé au CNRS, F-75230 Paris Cédex 05

来源：

SURFACE SCIENCE | 1979年 / 86卷 / JUL期

关键词：

D O I：

10.1016/0039-6028(79)90470-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We present here a review of optical spectroscopic methods applied to semiconductor surface states. Some results on Si, Ge, III-V compounds obtained by ultraviolet photoemission spectroscopy and photoemission yield spectroscopy are emphasized and compared with theoretical calculations. It is shown that the confrontation of theory and experiments can give now a rather good understanding of the electronic properties of clean surfaces. © 1979.

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页码：874 / 887

页数：14

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