MICROSTRUCTURE AND SCHOTTKY-BARRIER HEIGHT OF THE YB/GAAS INTERFACE

被引：9

作者：

HIROSE, K

AKIMOTO, K

HIROSAWA, I

MIZUKI, J

MIZUTANI, T

MATSUI, J

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.39.8037

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：8037 / 8039

页数：3

共 18 条

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