FORMATION OF INTERFACES BETWEEN IN AND AU AND GAAS(100) STUDIED WITH SOFT-X-RAY PHOTOEMISSION SPECTROSCOPY

被引:42
作者
MAO, D
SANTOS, M
SHAYEGAN, M
KAHN, A
LELAY, G
HWU, Y
MARGARITONDO, G
FLOREZ, LT
HARBISON, JP
机构
[1] UNIV AIX MARSEILLE 1,F-13331 MARSEILLE 3,FRANCE
[2] UNIV WISCONSIN,DEPT PHYS,MADISON,WI 53706
[3] UNIV WISCONSIN,CTR SYNCHROTRON RADIAT,MADISON,WI 53706
[4] ECOLE POLYTECH FED LAUSANNE,INST PHYS APPL,CH-1015 LAUSANNE,SWITZERLAND
[5] BELL COMMUN RES INC,RED BANK,NJ 07701
来源
PHYSICAL REVIEW B | 1992年 / 45卷 / 03期
关键词
D O I
10.1103/PhysRevB.45.1273
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A study of the formation of In- and Au-GaAs(100) interfaces is reported. The metal overlayers are deposited in ultrahigh vacuum on room-temperature (RT) and low-temperature (LT) (100)GaAs grown by molecular-beam epitaxy, following the evaporation of a protective As capping layer from the semiconductor surface. High-resolution photoemission spectroscopy and low-energy electron diffraction are used to characterize these interfaces. In forms a two-dimensional interface layer plus clusters at RT and LT, with reduced clustering at LT. The top substrate layers are only slightly altered by In. The Au-induced perturbation is more significant, as reflected by Ga outdiffusion even at LT. Different Ga core-level components are found at RT and LT, attesting to different levels of segregation as a function of temperature. The GaAs(100) band bending is studied as a function of metal coverage and deposition temperature. Kelvin-probe measurements, coupled with synchrotron-radiation photoemission, are performed to evaluate the synchrotron-light-induced surface photovoltage. The Fermi level is found to be pinned at 0.4 and 0.6 eV above the valence-band maximum for Au and In, respectively, in good agreement with the positions obtained on the cleaved (110) GaAs surface. Evidence of correlation between pinning and overlayer metallization is found for both interfaces.
引用
收藏
页码:1273 / 1283
页数:11
相关论文
共 49 条
[1]   SURFACE PHOTOVOLTAGE EFFECTS IN PHOTOEMISSION FROM METAL GAP(110) INTERFACES - TEMPERATURE-DEPENDENT FERMI LEVEL MOVEMENT [J].
ALONSO, M ;
CIMINO, R ;
HORN, K .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (03) :891-897
[2]   SURFACE PHOTOVOLTAGE EFFECTS IN PHOTOEMISSION FROM METAL-GAP(110) INTERFACES - IMPORTANCE FOR BAND-BENDING EVALUATION [J].
ALONSO, M ;
CIMINO, R ;
HORN, K .
PHYSICAL REVIEW LETTERS, 1990, 64 (16) :1947-1950
[3]   ADATOM-INDUCED DONOR STATES DURING THE EARLY STAGES OF SCHOTTKY-BARRIER FORMATION - GA, IN, AND PB ON SI(113) [J].
ALTHAINZ, P ;
MYLER, U ;
JACOBI, K .
PHYSICAL REVIEW B, 1991, 43 (17) :14157-14163
[4]   THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].
Brillson, L. J. .
SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326
[5]   KINETICS STUDY OF INITIAL-STAGE BAND BENDING AT METAL GAAS(110) INTERFACES [J].
CAO, R ;
MIYANO, K ;
KENDELEWICZ, T ;
CHIN, KK ;
LINDAU, I ;
SPICER, WE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :998-1002
[6]   INCREASED RANGE OF FERMI-LEVEL STABILIZATION ENERGY AT METAL MELT-GROWN GAAS(100) INTERFACES [J].
CHANG, S ;
VITOMIROV, IM ;
BRILLSON, LJ ;
RIOUX, DF ;
KIRCHNER, PD ;
PETTIT, GD ;
WOODALL, JM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (04) :2129-2134
[7]   CHEMICAL-REACTION AT THE IN ON GAAS(110) INTERFACE [J].
CHIN, KK ;
KENDELEWICZ, T ;
NEWMAN, N ;
LINDAU, I ;
SPICER, WE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :955-958
[8]   PHOTOEMISSION STUDY OF AU SCHOTTKY-BARRIER FORMATION ON GASB, GAAS, AND INP USING SYNCHROTRON RADIATION [J].
CHYE, PW ;
LINDAU, I ;
PIANETTA, P ;
GARNER, CM ;
SU, CY ;
SPICER, WE .
PHYSICAL REVIEW B, 1978, 18 (10) :5545-5559
[9]   MANY-ELECTRON SINGULARITY IN X-RAY PHOTOEMISSION AND X-RAY LINE SPECTRA FROM METALS [J].
DONIACH, S ;
SUNJIC, M .
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1970, 3 (02) :285-&
[10]   COMPOSITION AND STRUCTURE OF DIFFERENTLY PREPARED GAAS(100) SURFACES STUDIED BY LEED AND AES [J].
DRATHEN, P ;
RANKE, W ;
JACOBI, K .
SURFACE SCIENCE, 1978, 77 (01) :L162-L166